Canon FPA-5510iX Stepper

High-resolution imaging across a large exposure field.

Cropped front view of i-Line lithography model Canon FPA-5510iX

≦ 500 nm


≦ 50 nm

overlay accuracy

52 mm x 56 mm

exposure area


exposure for large chip sizes

Large-field exposure without stitching

Capable of 0.5 µm resolution across a large exposure area, the Canon FPA-5510iX stepper can perform one-shot exposure for larger-than-normal chip sizes, improving both image quality and productivity.

Large field

Cover image sensors and MEMS¹ applications with a larger exposure field.

Stable performance

Support front-end-of-the-line semiconductor manufacturing and back-end processes.

Process options

Optimise equipment with extensive optional functions, including WB-OAS², LOX3, EAGA4.

Front view of i-Line lithograph model Canon FPA-5510iX

Product Specifications

Wafer size

300 mm, 200 mm

Overlay accuracy

≤ 50 nm (|m|+3)


≦ 500 nm

Numerical Aperture (NA)

0.28 ~ 0.37

Exposure area

52 mm x 56 mm

Reticle size

6 in. (0.25 in. thick)

Full view of i-Line lithography machine Canon FPA-5510iX
Revolutionise your front-end-of-the-line processes with the Canon FPA-5510iX Stepper

Related Products

Full view close crop - Canon FPA-6300ESW KrF scanner


Wide-field KrF scanner with enhanced lens capabilities.

Full view of Canon FPA-3030EX6 KrF scanner


KrF Stepper for IoT1 devices using substrates of varying material, sizes and thicknesses.

Find out how Canon Industrial Products can accelerate your business


1. MEMS: An abbreviation of "Micro Electro Mechanical Systems" which are devices having micron-level mechanical structures such as collecting sensors and actuators that are integrated with electronic circuitry.
2. WB-OAS (Wideband-Off-Axis Scope): Optional function that provides a wide-range of alignment light wavelengths to the OAS for wafer alignment. By covering the wavelength band from the visible light to the infrared, it is possible to perform stable alignment in most display and color-filter processes and in a backside illumination sensor process, it is also possible to align marks on the back side of a silicon wafer.
3. LOX (Low-Oxygen Exposure): Optional stepper function that reduces the oxygen concentration in the wafer lens area, which can increase photoresist reaction sensitivity and reduce required exposure doses which in turn improves overlay accuracy and productivity.
4. EAGA (Extended Advanced Global Alignment): Optional stepper function to correct for "nonlinear overlay error components" that cannot be corrected using standard AGA sampling and linear compensation. EAGA enables shotby-shot direct position measurement for all exposure fields to improve overlay accuracy.
5. IoT: Internet of Things